What are you looking for ?
IT Press Tour
RAIDON

FMS 2025: NEO Semiconductor Introduces Extreme High Bandwidth Memory (X-HBM) Architecture for AI Chips

X-HBM architecture delivers 32K-bit wide data bus and potentially 512Gb/die density, offering 16X more bandwidth or 10X higher density than traditional HBM

NEO Semiconductor introduced a world’s first Extreme High Bandwidth Memory (X-HBM) architecture for AI chips.

Neo Semiconductor X Hbm

Built to meet the growing demands of GenAI and HPC, X-HBM delivers performance with a 32K-bit data bus and potentially 512Gb/die, surpassing the limitations of traditional HBM with 16X greater bandwidth or 10X higher density.

X-HBM is not an incremental upgrade, it’s a fundamental breakthrough,” said Andy Hsu, founder and CEO, NEO Semiconductor. “With 16X the bandwidth or 10X the density of current memory technologies, X-HBM gives AI chipmakers a clear path to deliver next-generation performance years ahead of the existing roadmap. It’s a game-changer for accelerating AI infrastructure, reducing energy consumption, and scaling AI capabilities across industries.”

Built on the company’s 3D X-DRAM architecture, X-HBM represents a major leap in memory technology by eliminating long-standing limitations in bandwidth and density. In contrast, HBM5, still in development and expected to reach the market around 2030, is projected to support only 4K-bit data buses and 40Gb/die. A recent study from the Korea Advanced Institute of Science and Technology (KAIST) projects that even HBM8, expected around 2040, will offer just 16K-bit buses and 80Gb/die. In comparison, X-HBM delivers 32K-bit buses and 512Gb/die, allowing AI chip designers to bypass a full decade of incremental performance bottlenecks associated with traditional HBM technology.

Key Features and Benefits:

  • Scalable – Enables faster data transfer between GPUs and memory for more efficient AI scaling.
  • High-Performance – Unlocks untapped GPU capabilities to boost AI workloads.
  • Sustainable – Reduces power and hardware needs by consolidating AI infrastructure.

Andy Hsu, CEO, NEO Semiconductor, will deliver a keynote presentation on August 6, at 11 a.m. PST at FMS: the Future of Memory and Storage 2025, where he will discuss the breakthrough X-HBM technology. The event takes place August 5-7, 2025, at the Santa Clara Convention Center, CA. The company will also be exhibiting at booth #507.

Read also :
Articles_bottom
ExaGrid
AIC
ATTO
OPEN-E