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Micron UFS 4.0 Mobile Storage Built on 232-Layer 3D NAND Delivers Fastest Performance for Smartphones

Up to 4,300MB/s and 4,000MB/s sequential RW speeds mobile flash solution optimized for AI and 5G data-intensive smartphones

Micron Technology, Inc. is delivering qualification samples of its Universal Flash Storage (UFS) 4.0 mobile solution, built on its 232-layer 3D NAND.

Micron Ufs 4.0 Intro 2306

Offered in capacities up to 1TB, the UFS 4.0 storage solution is being shipped to select global smartphone manufacturers and chipset vendors. The company’s newest mobile flash storage outpaces competition on several critical NAND benchmarks, delivering the industry’s fastest performance (1) for flagship smartphones with fast bootup, app launches and video downloads.

Micron’s latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance,” said Mark Montierth, corporate VP and GM, mobile business unit. “Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones.

Micron 232l Nand Tower Gold 2306

This product is the company 1st mobile solution built on the firm’s 232-layer TLC NAND, which delivers 100% higher write bandwidth and 75% higher read bandwidth. (2) The company’s 232-layer 3D NAND architecture provides more bits per square millimeter of silicon by stacking the NAND bit cell array into more layers, allowing greater density, performance improvements and capacity growth. This latest mobile solution (3) also represents the world’s first UFS 4.0 storage to use 6-plane NAND architecture, which allows higher random read throughput – leading to more responsiveness, faster application loading times and a better overall user experience.

UFS 4.0 solution:

  • Offers up to 4,300MB/s sequential read and 4,000MB/s sequential write speed, 2x the performance of previous generations so users can launch their favorite social media apps faster (2)

  • Is 25% more power-efficient so users can enjoy data-intensive apps longer without the hassle of frequent charging (2)

  • Provides 10% write latency improvement over competition, resulting in super responsive app performance (1)

  • Allows users to quickly download 2 hours of 4K streaming content in less than 15s, 2x as fast as the prior gen (2)

This mobile storage solution is designed using Micron’s 232-layer 3D NAND and its internally developed controller and firmware. This tight vertical integration allows the firm to optimize synergy between the hardware and firmware to deliver leadership in quality, performance and power.

Micron Ufs 4.0 Scheme1 2306

The company is shipping samples of its UFS 4.0 storage solution to key mobile manufacturers and chipset vendors WW in capacities of 256GB, 512GB and 1TB.

The firm will begin high-volume production of its UFS 4.0 storage solution in the 2H23 – equipping the mobile ecosystem with the high-performance mobile flash storage needed to innovate the next wave of 5G and AI-enabled flagship smartphone experiences.

(1) As compared to benchmark testing in Micron labs against competitors’ publicly available UFS 4.0 product performance
(2) As compared to previous-generation UFS 3.1 176-layer NAND
(3) For 512GB and 1TB capacities only

Blog : First to Market, Second to None: The World’s First 232-Layer NAND

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