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Toshiba Memory and Western Digital Celebrate Opening of Fab 6 and Memory R&D Center

At Yokkaichi, Japan, notably for production of 96-layer 3D flash memory

Toshiba Memory Corporation (TMC) and Western Digital Corporation celebrated the opening of a new semiconductor fabrication facility, Fab 6, and the Memory R&D Center, at Yokkaichi operations in Mie Prefecture, Japan.

TMC started construction of Fab 6, a dedicated 3D flash memory fabrication facility, in February 2017.

TMC and Western Digital have installed manufacturing equipment for key production processes including deposition and etching.

Mass production of 96-layer 3D flash memory utilizing the new fab began earlier this month.

Demand for 3D flash memory is growing for enterprise servers, data centers and smartphones, and is expected to continue to expand in the years ahead. Further investments to expand its production will be made in line with market trends.

The Memory R&D Center, located adjacent to Fab 6, began operations in March of this year, and will explore and promote advances in the development of 3D flash memory.

TMC and Western Digital will continue to cultivate and extend their leadership in the memory business by developing initiatives aimed at strengthening competitiveness, advancing joint development of 3D flash memory, and making capital investments according to market trends.

Dr. Yasuo Naruke, president and CEO, TMC, said: “We are excited about opportunities to expand the market for our latest generation of 3D flash memory. Fab 6 and Memory R&D Center enable us to maintain our positin as a leading player in the 3D flash memory market. We are confident that our joint venture with Western Digital will allow us to continue producing leading edge memories at Yokkaichi.

We are pleased to be opening Fab 6 and the Memory R&D Center with our valued partner Toshiba Memory. For nearly two decades, the successful collaboration between our companies has fostered growth and innovation of NAND flash technology,” said Steve Milligan, CEO, Western Digital. “We are ramping production of 96-layer 3D NAND to address the full range of end market opportunities from consumer and mobile applications to cloud data centers. Fab 6 is a cutting-edge facility that will enable us to further our technology and cost leadership position in the industry.”

Read also:
Toshiba Memory Corporation to Make Next Investment in Production Equipment for Fab 6 at Yokkaichi
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2018.03.28 | Press Release
Toshiba Memory Corporation to Invest ¥27 Billion in Fab 6
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2018.02.20 | Press Release
Second Investment in Flash Memory Fab 6 by Toshiba Memory Corporation
¥110 billion
2017.10.11 | Press Release
Toshiba to Unilaterally Invests in Manufacturing Equipment for Fab 6 Clean Room at Yokkaichi Operations
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2017.08.03 | Press Release
Toshiba to Invest ¥180 Billion in Flash Manufacturing Facilities for Fab 6 at Yokkaichi Operations
With or without SanDisk
2017.06.28 | Press Release
Toshiba Starts Construction of Fab 6 and Memory R&D Center at Yokkaichi, Japan
For 3D flash memory
2017.02.10 | Press Release

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