R&D: Ferroelectric Memory Technology for Big Data Applications

ACM Transactions on Embedded Computing Systems has published an article written by Nikhil Shukla, ECE, University of Virginia School of Engineering & Applied Science, Charlottesville, USA, Kai Ni, Electrical Engineering, University of Notre Dame, Notre Dame, USA, Sam Stevenson, University of Virginia, Charlottesville, USA, and Vijaykrishnan Narayanan, The Pennsylvania State University University Park, University Park, USA.

Abstract: “Big Data has an insatiable appetite for larger and better-performing memory. While current memory technologies continue to advance, the performance gaps in current memory and storage technology have motivated the exploration of emerging memory technologies capable of providing new functionalities. Ferroelectric memory is one such promising candidate which has recently experienced a revival after the discovery of ferroelectricity in hafnium dioxide (HfO₂) – the dielectric of choice in advanced CMOS manufacturing. While the commercial viability of ferroelectric memory technology has made significant progress over the past decade, several challenges related to variation and reliability still stand as a barrier to large-scale commercial implementation. Here, we review some of the outstanding challenges of ferroelectric memory technology along with the recent materials and device innovations that are being considered to overcome them. Moreover, we aim to highlight these challenges as materials and device co-design problems that must be addressed through collaborative efforts that straddle the two disciplines. We identify and provide our perspective on some of the key challenges and opportunities for ferroelectric-based microelectronic technology.“