CEA and Weebit Nano Assigned Two Patents

Method for manufacturing OxRAM-type resistive memory cell and associated OxRAM-type memory cell
Commissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, and Weebit Nano Ltd., Hod Hasharon, Israel, has been assigned a patent (12414485) developed by Molas; Gabriel, Verdy; Anthonin, Dory; Jean-Baptiste, and Nodin; Jean-François, Grenoble, France, for a “method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for manufacturing an OxRAM resistive memory cell, includes forming a TiN lower electrode, firstly implanting Si atoms into the lower electrode with a first implantation dose and a first implantation acceleration voltage, the first implantation dose being strictly positive and strictly lower than 0.7.Math.10.sup.14 cm.sup.−2, secondly implanting Si atoms into the lower electrode with a second implantation dose and a second implantation acceleration voltage strictly greater than the first implantation acceleration voltage, the second implantation dose being strictly positive and strictly lower than 0.6.Math.10.sup.14 cm.sup.−2, the first and second acceleration voltages being selected to have an implantation profile following the first and second implantations having a maximum Si concentration at a depth of between 1 and 3 nm from the upper surface of the lower electrode, depositing an active layer onto the lower electrode implanted, depositing an upper electrode onto the active layer.”

The patent application was filed on 2024-12-18 (18/985575).

Resistive memory with selector, equipped with write capacitor, and associated writing method
Commissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, and Weebit Nano Ltd., Hod Hasharon, Israel, has been assigned a patent (12406724) developed by Trotti; Paola, Molas; Gabriel, Pillonnet; Gaël, Verdy; Anthonin, Grenoble, France, and Regev; Amir, Modiin, Israel, for “resistive memory with selector, equipped with a write capacitor, and associated writing method.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory includes at least one resistive memory cell and a write device. The memory cell includes a memory element having at least a highly resistive state and a lowly resistive state, and a selector arranged in series with the memory element, the selector being electrically conductive when a voltage greater than a given threshold voltage is applied to the selector. The write device includes at least one write capacitor and one charging device, and is configured to charge the write capacitor and then to connect it to the memory cell to program that cell.”

The patent application was filed on 2022-12-12 (18/079325).