CEA and Weebit Nano Assigned Two Patents
Manufacturing OxRAM type resistive memory cell, low forming voltage OxRAM memory cell, and associated method of manufacture
By Francis Pelletier | July 9, 2025 at 2:00 pmManufacturing an OxRAM type resistive memory cell
Commissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, and Weebit Nano Ltd., Hod-Hasharon, Israel, has been assigned a patent (12349605) developed by Molas; Gabriel, Grenoble, France, Piccolboni; Guiseppe, Verona, Italy, Regev; Amir, Modiin, Israel, Castellan; Gaël, and Nodin; Jean-François, Grenoble, France, for a “method for manufacturing an OxRAM type resistive memory cell.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for manufacturing an OxRAM type resistive memory cell including a silicon oxide layer, the method including determining manufacturing parameter values enabling the resistive memory cell to have an initial resistance between 10.sup.7Ω and 3.Math.10.sup.9Ω; and forming on a substrate a stack successively including a first electrode, the silicon oxide layer and a second electrode, by applying the manufacturing parameter values.”
The patent application was filed on 2020-06-11 (17/618295).
Low forming voltage OxRAM memory cell, and associated method of manufacture
Commissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, and Weebit Nano Ltd., Hod-Hasharon, Israel, has been assigned a patent (12349609) developed by Molas; Gabriel, Magis; Thomas, Nodin; Jean-François, Bricalli; Alessandro, Grenoble, France, Piccolboni; Guiseppe, Verona, Italy, Cohen; Yifat, Kiryat Tivon, Israel, and Regev; Amir, Modiin, Israel, for “low forming voltage OxRAM memory cell, and associated method of manufacture.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “An OxRAM resistive memory cell includes a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode. The active layer includes a layer of a first electrically insulating oxide, wherein an electrically conductive filament can be formed, then subsequently broken and reformed several times successively. The upper electrode includes a reservoir layer, capable of receiving oxygen, which includes an upper part made of a metal and a lower part made of a second oxide, the second oxide being an oxide of the metal and including a proportion of oxygen such that the second oxide is electrically conductive.”
The patent application was filed on 2020-11-17 (17/777494).
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