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Headway Technologies Assigned Four Patents

Spin injection assisted magnetic recording, Near field transducer with template layer for improved reliability, Tunneling magnetoresistance device with magnetically soft high moment free layer, Perpendicular magnetic recording writer with tunable pole side bridge design

Spin injection assisted magnetic recording
Headway Technologies, Inc., Milpitas, CA, has been assigned a patent (12322419) developed by Wu; Yan, Cupertino, CA, for a spin injection assisted magnetic recording.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A spin injection assisted magnetic recording structure is disclosed wherein a ferromagnetic (FM) layer and at least one spin preservation (SP) layer are formed between a main pole (MP) trailing side and a write shield (WS). Current (Ia) flows between the MP and WS, or is injected into the FM layer. As a result, the spin polarized electrons from the FM layer, which flow across one or two SP layers to generate a magnetization that enhances one or both of a local WS magnetization and return field, and a local MP magnetization and write field, respectively. A lead to the FM layer may be stitched to enable lower resistance and improve reliability. The FM layer may be recessed from the ABS to allow more overlap with the SP layer for lower current density while maintaining performance. Higher linear density and area density capability, and better reliability are achieved.

The patent application was filed on 2023-07-26 (18/359436).

Near field transducer with template layer for improved reliability
Headway Technologies, Inc., Milpitas, CA, has been assigned a patent (12288568) developed by Xu; Weihao, Wang; Shengyuan, and Xue; Dingchuan, San Jose, CA, for a near field transducer with template layer for improved reliability.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of fabricating a near field transducer (NFT) in a thermally assisted magnetic recording (TAMR) head is disclosed. In some embodiments, the method includes: depositing a dielectric layer and a template layer on a waveguide core; patterning the template layer to form a template; depositing an Au NFT layer; planarizing the Au NFT layer to generate a planar layer; depositing an upper NFT layer; applying a peg patterning mask; etching the upper NFT layer and the planar layer that includes the Au NFT layer; removing the template; and depositing a dielectric material and planarizing an upper surface that includes the upper NFT layer.

The patent application was filed on 2024-04-16 (18/637324).

Tunneling magnetoresistance device with magnetically soft high moment free layer
Headway Technologies, Inc., Milpitas, CA, has been assigned a patent (12266384) developed by Wang; Hui-Chuan, Pleasanton, CA, Kawasaki; Shohei, Sunnyvale, CA, Zhang; Kunliang, Fremont, CA, Oh; Sangmun, and Gao; Zheng, San Jose, CA, for a tunneling magnetoresistance device with magnetically soft high moment free layer.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present embodiments relate to a tunnel magnetoresistance (TMR) element. The TMR element can include a free layer comprising a metallic alloy that is doped using a dopant element. In some instances, the metallic alloy comprises a cobalt-iron (CoFe) alloy. The present embodiments relate to doping a small amount of an element (e.g., hafnium (Hf), tantalum (Ta), Yttrium (Y)) in a high flux CoFe layer of a tunnel magnetoresistance (TMR) element. The small amount of dopant can suppress a long-range order in the CoFe film. The amorphous state of a CoFe alloy can be induced by the dopant and result in a magnetically soft layer. A resistance of the TMR element can be modified based on an application of an external magnetic field to the free layer and the pin layer.

The patent application was filed on 2023-01-05 (18/093732).

Perpendicular magnetic recording writer with tunable pole side bridge design
Headway Technologies, Inc., Milpitas, CA, has been assigned a patent (12236984) developed by Liu; Yue, Fremont, CA, Dovek; Moris Musa, San Jose, CA, and Wu; Yan, Cupertino, CA, for a perpendicular magnetic recording writer with tunable pole side bridge design.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present embodiments relate to a perpendicular magnetic recording (PMR) write head with a Tunable Pole Protrusion or Tunable Pole Performance (TPP) side bridge design. A PMR write head can include a main pole including a tip portion configured to be disposed at an air-bearing surface (ABS) and configured to interact with a magnetic recording medium. The PMR write head can also include a hot seed (HS) portion and a first write shield. The PMR write head can also include a first metallic side bridge disposed between the tip portion of the main pole and the HS portion. The PMR write head can also include a bias circuit including at least a first bias electrical pad and a second electrical bias pad directing an electrical current flow along an electrical path between the tip portion of the main pole and the write shield portion via the first metallic side bridge.

The patent application was filed on 2022-10-24 (17/972514).

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