ITRI Assigned Patent

Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan, has been assigned a patent (12300292) developed by Lee; Hsin-Han, Hsinchu, Taiwan, Wei; Jeng-Hua, Taipei, Taiwan, Yang; Shan-Yi, Hsinchu, Taiwan, and Hsin; Yu-Chen, Tainan, Taiwan, for a “magnetic random access memory structure.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode, a first tunnel barrier layer disposed on the first free layer, and a first fixed layer disposed on the first tunnel barrier layer. The voltage control electrode is disposed on the first MTJ stack. The second MTJ stack includes a second fixed layer disposed on the voltage control electrode, a second tunnel barrier layer disposed on the second fixed layer, and a second free layer disposed on the second tunnel barrier layer. The second write electrode is disposed on the second MTJ stack.”

The patent application was filed on 2022-12-23 (18/146255).