R&D: Coexistence of WORM and RRAM Resistive Switching in Coumarin Derivatives, Comprehensive Performance Analysis

ACS Omega has published an article written by Rahul Deb, Hritinava Banik, Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University, Suryamaninagar, Agartala 799022, West Tripura, Tripura India, Utpal Chandra De, Department of Chemistry, Tripura University, Suryamaninagar, Agartala 799022, West Tripura, Tripura India, Debajyoti Bhattacharjee, Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University, Suryamaninagar, Agartala 799022, West Tripura, Tripura India, Khuloud A. Alibrahim, Department of Chemistry, College of Science, Princess Nourah bint Abdulrahman University, Riyadh 11671, Saudi Arabia, Abdullah N. Alodhayb, Research Chair for Tribology, Surface, and Interface Sciences, Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia, and Syed Arshad Hussain, Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University, Suryamaninagar, Agartala 799022, West Tripura, Tripura India.

Abstract: “Over the past few years, organic small molecules (OSM) having a π-conjugated heteroatomic aromatic backbone along with terminal donor–acceptor (D-A) groups have emerged as one of the most promising materials for organic resistive switching (ORS) devices. In this research, the resistive switching (RS) properties of two rationally synthesized coumarin derivatives, 7-(2-(benzylamino)ethoxy)-4-methyl-2H-chromen-2-one (CAMN1) and 7-(2-(4-methoxyphenylamino)ethoxy)-4-methyl-2H-chromen-2-one (CAMN2), have been exhaustively studied. The CAMN1-based ORS device exhibited WORM RS behavior with an excellent device yield of 97.22%, while the CAMN2-based device showed both WORM as well as RRAM RS behavior depending on the compliance current (CC) with a perfect device yield of 100%. Both devices exhibited superior read endurance on the order of 10⁴ as well as a retention time of at least 3 × 10⁴ s with a very good memory window of the order of 10⁴ or more. Moreover, both devices exhibited superior long-term physical and thermal stability. The cyclability of the CAMN2-based device in the RRAM mode of operation was found to be 116 cycles. DFT-based calculations as well as absorption spectroscopic studies reveal the role of the intra/intermolecular charge transfer (CT) in the RS behavior of both the devices. Moreover, the presence of the methoxy (−OCH₃) group in the CAMN2 molecule has been identified as the key reason behind the observed difference in the RS behaviors of the two molecules.“

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