Phison Electronics Assigned Five Patents

Voltage calibration method, memory storage device and memory control circuit unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12293784) developed by Jin; Chen; Po-Hao, Hsinchu County, Taiwan, Su; Po-Cheng, Zeng; Shih-Jia, Hsinchu, Taiwan, Hsu; Yu-Cheng, Yilan County, Taiwan, and Lin; Wei, Taipei, Taiwan, for “voltage calibration method, memory storage device and memory control circuit unit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A voltage calibration method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: reading first data from a first physical unit using a first read voltage level and reading second data from at least one second physical unit using a second read voltage level; obtaining count information reflecting a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit according to the first data and the second data; and calibrating the first read voltage level according to the count information.”

The patent application was filed on 2023-04-17 (18/301275).

Memory control method, memory storage device and memory control circuit unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12292825) developed by Huang; Sheng-Min, Hsinchu County, Taiwan, and Song; Shih-Ying, New Taipei, Taiwan, for “memory control method, memory storage device and memory control circuit unit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: generating a first operation command via one of a plurality of processing circuits, wherein the first operation command instructs to access a first memory group in a plurality of memory groups; and in response to a first state information, sending a first command sequence to the first memory group according to the first operation command to instruct the first memory group to perform an access operation. The first state information reflects a first activation state of the plurality of memory groups, and the first command sequence does not include a control command sequence configured to activate the first memory group.”

The patent application was filed on 2022-04-21 (17/726474).

Voltage prediction method, memory storage device and memory control circuit unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12293792) developed by Su; Po-Cheng, Hsinchu, Taiwan, Chen; Po-Hao, Hsinchu County, Taiwan, Hsu; Yu-Cheng, Yilan County, Taiwan, and Lin; Wei, Taipei, Taiwan, for “voltage prediction method, memory storage device and memory control circuit unit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A voltage prediction method, a memory storage device and a memory control circuit unit are disclosed. The method includes: reading a plurality of memory cells in a rewritable non-volatile memory module by using a first read voltage level to obtain count information, and the first read voltage level is configured to distinguish a first state and a second state adjacent to each other in a threshold voltage distribution of the memory cells, and the count information reflects a total number of first memory cells meeting a target condition among the memory cells; and predicting a second read voltage level according to the count information, and the second read voltage level is configured to distinguish a third state and a fourth state adjacent to each other in the threshold voltage distribution.”

The patent application was filed on 2023-04-10 (18/298335).

Clock control circuit module, memory storage device and clock control method
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12282353) developed by Sun; Shih-Yang, Taoyuan, and Wu; Guan-Wei, New Taipei, Taiwan, for “clock control circuit module, memory storage device and clock control method.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A clock control circuit module, a memory storage device, and a clock control method are disclosed. The clock control circuit module is configured to: generate a clock signal; receive a first signal and the clock signal and sample the first signal according to the clock signal to generate a first sampling signal and a second sampling signal; obtain first position information corresponding to a first transition point of a first target signal and second position information corresponding to a second transition point of a second target signal according to the first sampling signal and the second sampling signal respectively; and evaluate a frequency shift status between the first signal and the clock signal according to the first position information and the second position information.”

The patent application was filed on 2023-04-25 (18/306974).

Clock control circuit, memory storage device and clock control method
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12248699) developed by Chou; Cheng-Jui, Hsinchu County, Taiwan, and Lin; Kuen-Chih, New Taipei, Taiwan, for “clock control circuit, memory storage device and clock control method.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A clock control circuit, a memory storage device, and a clock control method are disclosed. The method includes: tracking a frequency of a first signal from a host system; generating, in a first mode, a clock signal according to the frequency of the first signal; and generating, in a second mode, the clock signal without reference to the frequency of the first signal.”

The patent application was filed on 2023-06-12 (18/332766).