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STMicroelectronics Assigned Patent

Phase change memory

STMicroelectronics (Crolles 2) SAS, Crolles, France, has been assigned a patent (12295272) developed by Favennec; Laurent, Villard Bonnot, France, et Piazza; Fausto, Grenoble, France, for a phase change memory.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for making a phase change memory includes a step of forming an array of phase change memory cells, with each cell being separated from neighboring cells in the same line of the array and from neighboring cells in the same column of the array, by the same first distance. The method further includes a step of etching one memory cell out of N, with N being at least equal to 2, in each line or each column.

The patent application was filed on 2022-06-22 (17/847016).

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