Institute of Microelectronics Chinese Academy of Sciences Assigned Patent

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, has been assigned a patent (12002500) developed by Lv; Hangbing, Luo; Qing, Xu; Xiaoxin, Gong; Tiancheng, and Liu; Ming, Beijing, China, for “writing method and erasing method of fusion memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A writing method and erasing method of a fusion memory are provided, and the fusion memory includes a plurality of memory cells, and each memory cell of the plurality of memory cells includes a bulk substrate; a source and a drain on the bulk substrate, a channel region extending between the source and the drain, and a ferroelectric layer and a gate stacked on the channel region; and the writing method includes: applying a first voltage between the gate of at least one memory cell and the bulk of at least one memory cell, in which the first voltage is less than a reversal voltage at which the ferroelectric layer is polarization reversed, and each of the source and the drain is grounded or in a floating state.”

The patent application was filed on 2019-01-28 (17/426053).