R&D: Fluorinated Quinoxaline-Based Conjugated Polymers for High-Density NVM Devices

ACS Applied Polymer Materials has published an article written by Yanting Du, Jiayu Li, School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China, Songhao Zhao, School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China, Haifeng Yu, School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China, Lei Ji, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, P. R. China, Shuhong Wang, School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China, and Cheng Wang, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, P. R. China.

Abstract: “Fluorinated materials have been widely utilized in optoelectronic devices. However, there has been a rare exploration of the use of fluorinated materials in polymer-based memory devices. To explore the impact of fluorinated acceptors on the storage capabilities of polymers, six donor–acceptor (D–A type) conjugated polymers were synthesized by using the Suzuki coupling reaction. Subsequently, polymers were utilized in the fabrication of basic sandwich-structured devices consisting of layers of indium–tin–oxide/polymer/aluminum (ITO/polymer/Al). Fluorinated polymers demonstrated significantly higher current switching ratios compared to non-fluorinated polymers. This increased ratio suggested an improved resolution in the readout, thus decreasing the probability of misinterpretation. It is imperative to emphasize that the poly[2-(2,3-bis(4-fluorophenyl)quinoxaline-5-yl)-9-(heptadecane-9-yl)-9H-carbazole] (PCzFQ) device exhibited exceptional performance, with an OFF:ON1:ON2 ratio as high as 1:10^1.8:10^4.7. This work supported the feasibility of introducing fluorine atoms into the acceptor unit to enhance the properties of memory devices, providing an available approach for synthesizing high-performance ternary memory materials.“