Nuvoton Technology Assigned Patent

Nuvoton Technology Corporation Japan, Kyoto, Japan, has been assigned a patent (11889776) developed by Yasuhara, Ryutaro, Hyogo, Japan, Fujii, Satoru, Osaka, Japan, Mikawa, Takumi, Shiga, Japan, Himeno, Atsushi, Osaka, Japan, Nishio, Kengo, Miyazaki, Takehide, Akinaga, Hiroyuki, Naitoh, Yasuhisa, and Shima, Hisashi, Ibaraki, Japan, for “variable resistance non-volatile memory element and variable resistance non-volatile memory device using the element.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.”

The patent application was filed on 2021-06-23 (17/356029).