Ulsan National Institute of Science and Technology Assigned Patent

UNIST (Ulsan National Institute of Science and Technology), Ulsan, Korea, has been assigned a patent (11855204) developed by Lee, Jun Hee, Lee, Hyun Jae, and Kim, Chang Hoon, Ulsan, Korea, for “ultra high-density memory and multi-level memory device and method of fabricating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Provided is a memory device. The memory device includes: a substrate, a gate insulating film disposed on the substrate, a ferroelectric thin film disposed on the gate insulating film, a blocking film disposed on the ferroelectric thin film, and a gate pattern disposed on the blocking film, wherein the ferroelectric thin film includes a spacer having a fixed polarization regardless of an electric field that is applied from an outside, and a ferroelectric domain having a polarization controlled by the electric field that is applied from the outside, and a plurality of spacers and a plurality of ferroelectric domains are alternately and repeatedly provided in a direction parallel to a top surface of the substrate (in a b-lattice direction).”

The patent application was filed on 2021-04-19 (17/233608).