Tsinghua University Assigned Patent

Tsinghua University, Beijing, China, has been assigned a patent (11769541) developed by Li, Xueqing, He, Xiyu, Ma, Xiaoyang, Wu, Juejian, Xing, Zhiyang, Liu, Yongpan, and Yang, Huazhong, Beijing, China, for a “memory device based on ferroelectric capacitor.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure relates to a memory device based on a ferroelectric capacitor, which includes a control unit for writing data into a memory cell or reading data from the memory cell and a plurality of memory cells arranged in an array, each memory cell includes an external interface, a first switch, a transistor, a first capacitor and a second capacitor, wherein at least one of the first capacitor and the second capacitor is a ferroelectric capacitor, the first switch has a first port connected with a first word line, a second port connected with a bit line, and a third port connected with one end of the first capacitor, and the transistor has a gate electrode connected with another end of the first capacitor and one end of the second capacitor, a source electrode connected with a first read terminal, and a drain electrode connected with a second read terminal, wherein another end of the second capacitor is connected with a second word line. According to the present disclosure, a polarized state of the ferroelectric capacitor in the memory cell is held or changed based on hysteresis characteristics of the ferroelectric capacitor, and the control unit is used to write data into or read data from the memory cell, which can implement non-destructive reading of data and longer endurance of a write operation.”

The patent application was filed on 2022-06-03 (17/831581).