Fujian Jinhua Integrated Circuit Assigned Patent

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, China, has been assigned a patent (11610900) developed by Tung, Yu-Cheng, Kaohsiung, China, and Zhang, Janbo, Zhangzhou, China, for a “semiconductor memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The invention provides a semiconductor storage device including a substrate, a plurality of active areas which are arranged along an oblique direction, a dummy active area pattern, and the dummy active area pattern comprises a first edge principal axis pattern and a plurality of first long branches and a plurality of short branches connecting edge principal axis patterns, and a plurality of storage nodes are in contact with each other. According to the invention, a part of the storage node contacts are arranged on the dummy active area pattern, so that the difficulty of the manufacturing process can be reduced, and the surrounding storage node contacts can serve as protection structures to protect components and prevent the components from being physically or electrically affected.”

The patent application was filed on 2021-07-14 (17/376114).