BeSang Statement on Patent Infringement Lawsuits Vs. Micron and Intel

BeSang Inc., a fabless 3D memory technology company headquartered in Oregon, files patent lawsuits against Micron Technology, Inc. and Intel Corp.

The lawsuits allege that Intel and Micron infringe the company‘s IP covering vertical memory device structures. The lawsuits identify each company’s 3D NAND flash memory products as practicing the firm‘s patent claims without a license. In both cases, the company seeks damages.

3D NAND is commonly used in today’s mobile memory components and storage products such as SSDs. The firm‘s lawsuits detail how the company pioneered 3D memory technologies years before Micron and Intel released their 3D NAND products. The suits note that BeSang’s 3D prototypes, made at the Stanford Nanofabrication Facility in California and the National NanoFab Center in Korea, received critical acclaim.

Dr. Simon Sze, Member of the U.S. National Academy of Engineering and co-inventor of the floating-gate transistor for nonvolatile memory cells in 1967, stated: “Before BeSang’s design came, all other past attempts were pseudo 3D,’ and that ‘BeSang’s 3D IC is a very attractive technology.”

As the firm enforces its patent rights through the court system, the company will continue to innovate and pursue 3D memory technologies that will shape advanced memory components and storage products.

BeSang Inc. is a fabless company incorporated and headquartered in Oregon and a pioneer in memory technologies since its inception in 2003. The firm is the first company that successfully implemented vertical NVM cells and access transistors on top of logic circuitry. Since that time, the company has continued to work on the development and improvement of 3D memory technologies.

The firm has developed a  range of memory applications, such as 3D NAND, 3D DRAM, 3D NOR, and embedded cache for CPU/GPU. Various issued and pending patents WW cover extensive and specific boundaries of company’s inventions.