Industry-University Cooperation Foundation Hanyang University Assigned Patent

Industry-University Cooperation Foundation Hanyang University, Seoul, Korea, has been assigned a patent (11588057) developed by Jeong, Jae Kyeong, Yang, Hyun Ji, Seoul, Korea, and Seul, Hyeon Joo, Incheon, Korea, for “thin film transistor and vertical non-volatile memory device including metal oxide channel layer having bixbyite crystal.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A thin film transistor and a non-volatile memory device are provided. The thin film transistor comprises a gate electrode, and a metal oxide channel layer traversing the upper or lower portions of the gate electrode. The metal oxide channel layer has semiconductor properties while having bixbyite crystals. An insulating layer is disposed between the gate electrode and the metal oxide channel layer. Source and drain electrodes are electrically connected to both ends of the metal oxide channel layer, respectively.”

The patent application was filed on 2020-04-22 (16/759948).