HeFeChip Assigned Two Patents

Fabricating magnetic memory
HeFeChip Corporation Limited, Sai Ying Pun, Hong Kong, has been assigned a patent (11545617) developed by Chern, Geeng-Chuan, Cupertino, CA, for a “method of fabricating magnetic memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for forming a magnetic memory device is disclosed. At least one magnetic tunneling junction (MTJ) stack is formed on the substrate. The MTJ stack comprises a reference layer, a tunnel barrier layer and a free layer. A top electrode layer is formed on the MTJ stack. A patterned sacrificial layer is formed on the top electrode layer. The MTJ stack is then subjected to a MTJ patterning process in a high-density plasma chemical vapor deposition (HDPCVD) chamber, thereby sputtering off the MTJ stack not covered by the patterned sacrificial layer. During the MTJ patterning process, sidewalls of layers or sub-layers of the MTJ stack are simultaneously passivated in the HDPCVD chamber by depositing a sidewall protection layer.”

The patent application was filed on 2021-09-30 (17/489822).

Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device
HeFeChip Corporation Limited, Sai Ying Pun, Hong Kong, has been assigned a patent (11538986) developed by Ma, Qinli, Mt Kisco, NY, Chen, Wei-Chuan, Scarsdale, NY, and Han, Shu-Jen, Armonk, NY for an “asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.”

The patent application was filed on 2020-04-15 (16/848846).