Jiangsu Advanced Memory Technology and Jiangsu Advanced Memory Semiconductor Assigned Three Patents

Phase change memory and method of fabricating
Jiangsu Advanced Memory Technology Co., Ltd., and Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, China, has been assigned a patent (11476417) developed by Cheng, Sheng-Hung, Chang, Ming-Feng, and Yang, Tzu-Hao, Hsinchu County, Taiwan, for “phase change memory and method of fabricating the same.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater disposed over the lower electrode, an annular phase change layer disposed over the annular heater, and an upper electrode. The annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer, in which the upper electrode is in contact with an upper surface of the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.”

The patent application was filed on 2020-08-10 (16/988734).

Manufacturing phase change memory and PCM
Jiangsu Advanced Memory Technology Co., Ltd., and Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, China, has been assigned a patent (11302866) developed by Lam, Chung-Hon, Zhu, Yu, and Lo, Kuo-Feng, Hsinchu County, Taiwan, for “method of manufacturing phase change memory and phase change memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of manufacturing a phase change memory includes: forming a stacked structure including a conductive layer, a lower electrode layer over the conductive layer, an upper electrode layer, a phase change material between the lower and upper electrode layers, and a selector material between the conductive layer and the lower electrode layer, etching the upper electrode layer to form an upper electrode wire, etching the phase change material according to the upper electrode wire to form a phase change material layer and expose a portion of the lower electrode layer, wherein the phase change material layer has an exposed side surface, after etching the phase change material, performing a nitridizing treatment on the side surface of the phase change material layer to form a nitridized phase change material layer covering the same, and etching the lower electrode layer, the selector material and the conductive layer.”

The patent application was filed on 2020-07-22 (16/935209).

Method of manufacturing phase change memory
Jiangsu Advanced Memory Technology Co., Ltd., and Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, China, has been assigned a patent (11258013) developed by Lam, Chung-Hon, Zhu, Yu, and Lo, Kuo-Feng, Hsinchu County, Taiwan, for “method of manufacturing phase change memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of manufacturing a phase change memory includes: forming a stacked structure including a conductive layer, a lower electrode layer over the conductive layer, an upper electrode layer over the lower electrode layer, and a phase change material between the lower and upper electrode layers, etching the upper electrode layer according to a first mask to form an upper electrode wire, simultaneously etching the phase change material according to the upper electrode wire and performing a nitridizing treatment in a same plasma etching chamber until a phase change material layer and a nitridized phase change material layer are formed beneath the upper electrode wire and a portion of the lower electrode layer is exposed, wherein the nitridized phase change material layer covers a side surface of the phase change material layer, and removing the portion of the lower electrode layer and the conductive layer therebeneath.”

The patent application was filed on 2020-07-22 (16/935210).