R&D: Regulated Sensing Solution Based on Self-reference Principle for PCM + OTS Memory Array
From simulation results, sense amplifier is demonstrated to be robust for large range of sneak-path current and consequently for range of memory array size, suitable for embedded memory in high-end microcontroller.
This is a Press Release edited by StorageNewsletter.com on February 23, 2023 at 2:00 pmSpringer Nature Switzerland AG has published, in VLSI-SoC: Technology Advancement on SoC Design, an article written by J. Gasquez, STMicroelectronics, Crolles, Rousset, France, B. Giraud, CEA, LIST, MINATEC Campus, GRENOBLE, France, P. Boivin, Y. Moustapha-Rabault, STMicroelectronics, Crolles, Rousset, France,V. Della Marca, J. P. Walder, and J. M. Portal, Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.
Abstract: “Phase change memory (PCM) device associated with Ovonic Threshold Switch (OTS) selector is a proven solution to fill the gap between DRAM and mass storage. This technology also has the potential to be embedded in a high-end microcontroller. However, programming and reading phases efficiency is directly linked to the selector’s leakage current and the sneak-path management. To tackle this challenge, we propose in this paper, a new sense amplifier able to generate an auto-reference taking into account leakage current of unselected cells, including a regulation loop to compensate voltage drop due to reading current sensing. This auto-referenced sense, built on the charge-sharing principle, is designed on a 28nm FDSOI technology and validated through extensive Monte-Carlo and corner cases simulations. Layout and post-layout simulation results are also provided. From the simulation results, our sense amplifier is demonstrated to be robust for an ultra-large range of sneak-path current and consequently for a large range of memory array size, suitable for embedded memory in high-end microcontroller.“
Subscribe to our free daily newsletter
