Integrated Silicon Solution Assigned Patent

Integrated Silicon Solution (Cayman) Inc., Grand Cayman, Cayman Islands, has been assigned a patent (11,456,410) developed by Gajek, Marcin, Berkeley, CA, and Tzoufras, Michail, Sunnyvale, CA, for a “three-dimensional (3D) magnetic memory devices comprising a magnetic tunnel junction (MTJ) having a metallic buffer lay.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetic memory device comprises a cylindrical core and a plurality of layers surrounding the core. The plurality of layers include a metallic buffer layer, a ferromagnetic storage layer, a barrier layer, and a ferromagnetic reference layer. The cylindrical core, the metallic buffer layer, the ferromagnetic storage layer, the barrier layer, and the ferromagnetic reference layer collectively form a magnetic tunnel junction. A magnetization of the ferromagnetic layer storage parallels an interface between the metallic buffer layer and ferromagnetic storage layer.”

The patent application was filed on June 4, 2020 (16/892,964).