R&D: Accurate Phase Change Behavior Characterization Of Ultrathin Sb-Rich Films Based On Superlattice-Like Al/Ge10Sb90 System

Journal of Electronic Materials has published an article written by Jianzhong Xue, Yongxing Sui, Xiaoqin Zhu, Jianhao Zhang, Weihua Wu, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, 213001, China, and Hua Zou, School of Science, Hainan university, Haikou, 570228, China.

Abstract: “Sb-rich films, such as Ge₁₀Sb₉₀, having ultra-fast phase change speed are promising chalcogenide materials for phase change memory (PCM) applications. However, it is difficult to accurately observe the phase change properties of ultrathin Sb-rich films due to their volatilization at higher temperatures. In this work, we establish a strategy to characterize ultrathin phase change behavior based specifically on Al/Ge₁₀Sb₉₀ superlattice-like (SLL) structures. It is confirmed that the Al layers, which can form a retardant layer without phase change behavior, can efficiently inhibit the volatilization of Ge₁₀Sb₉₀ films. In addition, the crystallization temperature can be modulated by varying the thickness ratio in SLL structures. In particular, the film of [Al(10nm)/Ge₁₀Sb₉₀(2nm)]₅ is one of the promising candidates owing to their high crystallization temperature, good operating temperature for 10 years and excellent surface roughness.“