Fudan University Assigned Patent

Fudan University, Shanghai, China, has been assigned a patent (11,145,664) developed by Jiang, Anquan, Zhang, Yan, and Bai, Zilong, Shanghai, China, for “ferroelectric memory IC as well as method of operating the same and method of preparing the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed is an integrated circuit for ferroelectric memory, the integrated circuit comprising: a ferroelectric memory array having a storage unit array formed on a ferroelectric single-crystal layer, wherein each ferroelectric memory unit in the ferroelectric memory array is at least formed by one storage unit in the storage unit array, or at least formed by one storage unit in the storage unit array and one transistor formed on a silicon substrate of a silicon-based reading and writing circuit that is electrically connected to the storage unit.”

The patent application was filed on February 28, 2018 (16/322,032).