What are you looking for ?
RAIDON

ASM IP Holding Assigned Patent

Atomic layer deposition of III-V compounds to form V-NAND devices

ASM IP Holding B.V., Almere, The Netherlands, has been assigned a patent (11,139,308) developed by Blomberg, Tom E., Vantaa, Finland, Sharma, Varun, Helsinki, Finland, and Maes, Jan Willem, Wilrijk, Belgium, for an atomic layer deposition of III-V compounds to form V-NAND devices.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel..

The patent application was filed on December 13, 2016 (15/377,439).

Articles_bottom
SNL Awards_2026
AIC