ASM IP Holding Assigned Patent
Atomic layer deposition of III-V compounds to form V-NAND devices
By Francis Pelletier | November 8, 2021 at 2:00 pmASM IP Holding B.V., Almere, The Netherlands, has been assigned a patent (11,139,308) developed by Blomberg, Tom E., Vantaa, Finland, Sharma, Varun, Helsinki, Finland, and Maes, Jan Willem, Wilrijk, Belgium, for an “atomic layer deposition of III-V compounds to form V-NAND devices.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel..”
The patent application was filed on December 13, 2016 (15/377,439).











