Key Foundry Assigned Patent
Single poly non-volatile memory device, manufacturing and single poly non-volatile memory device array
By Francis Pelletier | October 25, 2021 at 1:00 pmKey Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11,127,749) developed by Kim, Su Jin, Cheonan-si, Korea, and Yoo, Hye Jin, Sejong, Korea, for “single poly non-volatile memory device, method of manufacturing the same and single poly non-volatile memory device array.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A single poly non-volatile memory device that includes: a first type lower well, first and second wells separately formed in an upper portion of the first type lower well, a source electrode, a selection transistor, a sensing transistor, and a drain electrode sequentially disposed in an upper portion of the first well. A control gate is formed in an upper portion of the second well with separated on an opposite side of the source electrode from the first well and connected to the gate of the sensing transistor.”
The patent application was filed on December 1, 2020 (17/108,444).











