Huazhong University of Science and Technology Assigned Patent

Huazhong University of Science and Technology, Hubei, China, has been assigned a patent (11,127,901) developed by Miao, Xiangshui, Tong, Hao, Shen, Yushan, and Cai, Wang, Hubei, China, for “three-dimensional stacked phase change memory and preparation method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A three-dimensional stacked phase change memory and a preparation method thereof are provided. The method comprises: preparing first horizontal electrodes spaced apart from each other on a substrate, preparing first strip-shaped phase change layers, each having a central gap, between the first horizontal electrodes, preparing first selectors in the central gaps of the first strip-shaped phase change layers, preparing a first insulating layer, preparing second strip-shaped phase change layers at same vertical positions on the first insulating layer, preparing second selectors, then preparing horizontally-oriented insulating holes between the horizontal electrodes, and preparing vertical electrodes between the adjacent insulating holes, thereby forming a multilayer stacked phase change memory with a vertical structure.”

The patent application was filed on November 29, 2018 (16/626,520).