R&D: Analysis of Performance of Nb2O5-Doped SiO2-Based MIM Devices for Memory and Neural Computation Applications
Reporting experimental results that show clear improvement in resistive behavior of devices and excellent analogical control of intermediate levels between high-resistance and low-resistance states
This is a Press Release edited by StorageNewsletter.com on August 20, 2021 at 1:30 pmSolid-State Electronics has published an article written by Ó.G.Ossorio, G.Vinuesa, H.García, B.Sahelices, S.Dueñas, H.Castán, Department of Electronics, University of Valladolid, Paseo de Belén 15, Valladolid E-47011, Spain, M.Ritala, Department of Chemistry, University of Helsinki, P.O.Box 55, Helsinki FI-00014, Finland, M.Leskelä, M.Kemell, and K.Kuklic, Institute of Physics, University of Tartu, W. Ostwald 1, Tartu 50411, Estonia.
Abstract: “Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different technologies that fit into the non-volatile memories’ area. In this study, we discuss the performance and electrical characteristics of RRAM cells constituted by MIM stacks with dielectric formed by Nb2O5-doped SiO2. We report experimental results that show a clear improvement in the resistive behavior of the devices and an excellent analogical control of the intermediate levels between high-resistance and low-resistance states.“
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