R&D: Review GeTe Thin Film-Based Phase-Change Materials

Applied Nanoscience has published an article written by Kamaljit Singh, Sudesh Kumari, Harpreet Singh, Neeru Bala, Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University Patiala, Patiala, Punjab, 147002, India, and Department of Physics, Punjabi University Patiala, Patiala, Punjab, 147002, India, Palwinder Singh, Department of Physics, Chungbuk National University, Cheongju, Chungbuk, 28644, Republic of Korea, Akshay Kumar, Department of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh Sahib, Punjab, 140407, India, and Anup Thakur, Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University Patiala, Patiala, Punjab, 147002, India.

Abstract: “Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family, which undergoes reversible transition between amorphous and crystalline phase when subjected to optical or electrical pulse. The fast structural reversibility poses GeTe as an ideal material for data storage devices. GeTe is one of the best candidates for non-volatile memory technologies because of its high speed, low power consumption, scalability, data retention, and storage capacity. In this review, we discuss the developments in GeTe PCM, and their working and effect of interface and doping to upgrade their performance for various technological applications.“