Shanghai Huali Microelectronics Assigned Patent

Shanghai Huali Microelectronics Corporation, Shanghai, China, has been assigned a patent (11,043,504) developed by Yao, Shaokang, Ju, Xiaohua, and Huang, Guanqun, Shanghai, China, for “method for fabricating word lines of NAND memory and NAND memory comprising word lines fabricated by adopting the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments described herein relate to a method for fabricating word lines of a NAND memory. In the process for fabricating the word lines of the NAND memory, by adding a sacrificial pattern at a position close to a core layer or a sidewall of a select transistor at the edge of the word lines, the actual word line pattern is not at the outermost edge of the pattern, the pattern density of the edge word line pattern is closer to the pattern density of the middle word line pattern, the morphology and size of the edge word line are closer to the morphology and size of the middle area during core layer etching and sidewall etching, and thus the uniformity of the finally etched word lines is improved.”

The patent application was filed on May 14, 2020 (Appl. No.16/874,209).