R&D: Multifunctional Molybdenum Disulfide Flash Memory Using PEDOT:PSS Floating Gate

NPG Asia Materials has published an article written by Seongin Hong, Junwoo Park, Jung Joon Lee, School of Advanced Materials Science and Engineering Sungkyunkwan University, Sunwon, 440-746, Korea, Sunjong Lee, Kyungho Yun, Korea Institute of Industrial Technology, Cheonan, 31056, Republic of Korea, Hocheon Yoo, Department of Electronic Engineering Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Korea, and Sunkook Kim, School of Advanced Materials Science and Engineering Sungkyunkwan University, Sunwon, 440-746, Korea.

Abstract: “Two-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS2), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS2 flash memory by combining a MoS2 channel with a PEDOT:PSS floating layer. The proposed MoS2 memory devices exhibit a switching ratio as high as 2.3 × 107, a large memory window (54.6 ± 7.80 V), and high endurance (>1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS2 and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.“