R&D: Phase Change Behavior and Multi-Level Storage for V2O5 Thin-Film in Phase-Change Memory Application

ECS Journal of Solid State Science and Technology has published an article written by Yongkang Xu, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, People’s Republic of China,Yifeng Hu, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, People’s Republic of China, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China, and Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China, Song Sun, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, People’s Republic of China, and Tianshu Lai, State-Key Laboratory of Optoelectronic Materials and Technology, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China.

Abstract: “In heating process, the two obvious resistance mutations were observed for V₂O₅ films at 320°C and 345°C. The crystallization mechanism of one-dimensional growth was the main reason for the rapid phase transition. Accompanied with the phase change, the microcrystalline and polycrystalline phases formed one after another. The element scan of micro-distribution indicated that the distribution of V and O elements were uniform. A good adhesive force was demonstrated by the scratch test. The multi-level storage was achieved in V₂O₅-based phase change memory device with a fast speed of 100 ns.“