IBM Assigned Eight Patents

Single-sided liner PCM cell for 3D crossbar PCM memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,707,417) developed by Bruce, Robert L., White Plains, NY, BrightSky, Matthew Joseph, Armonk, NY, and Kim, SangBum, Suwanee, GA, for a “single-sided liner PCM cell for 3D crossbar PCM memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A cross-point memory array and method for manufacturing. The memory array includes a plurality of first conductive line structures formed in a dielectric material layer, a plurality of memory elements, each memory element including a fill-in phase change memory (PCM) cell, and an access device enabling read or write access to said memory PCM structure, a plurality of second conductive line structures, the plurality of second conductive structures perpendicularly oriented relative to the plurality of first conductive structures. An individual memory element of the plurality of memory elements is conductively connected at a respective intersection between a first conductive line structure and a second conductive line structure. Each phase change memory (PCM) cell of a memory element at an intersection having a sub-lithographic conductive tuning liner disposed on only one sidewall of the PCM cell. The manufacturing maintains a minimal number of masking and processing steps.”

The patent application was filed on May 2, 2019 (16/401,706).

Planar single-crystal phase change material device
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,700,274) developed by Cohen, Guy, Ossining, NY, for a “planar single-crystal phase change material device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method of fabricating a phase change material (PCM) device is provided. The method includes disposing a dielectric layer above or below a PCM layer and disposing first and second contacts in a same plane within the dielectric layer with the first contact having a larger contact area than the second contact. The method also includes one of directing a short current pulse from the first contact to the second contact so as to form amorphous-PCM in a region of the PCM layer adjacent to the second contact with crystalline-PCM partially surrounding and in contact with the amorphous-PCM and directing a long current pulse from the first contact to the second contact so as to form crystalline-PCM in the region of the PCM layer adjacent to the second contact.”

The patent application was filed on October 4, 2018 (16/151,738).

Writing multiple levels in a phase change memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,692,576) developed by Lam, Chung H., Peekskill, NY, Lewis, Scott C., Essex Junction, VT, Maffitt, Thomas M., Burlington, VT, and Morrish, Jack, Shelburne, VT, for “writing multiple levels in a phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.”

The patent application was filed on May 14, 2019 (16/411,844).

Void control of confined phase change memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,692,574) developed by Kim, Wanki, Chappaqua, NY, Lam, Chung Hon, Peekskill, NY, Zhu, Yu, Rye Brook, NY, and Xie, Yujun, New Haven, CT, for “void control of confined phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Techniques for void reduction in phase change memory (PCM) devices are provided. In one embodiment, the system is provided that comprises a PCM device comprising a first electrode and a second electrode. The system can further comprise a first connector coupled to the first electrode and that applies a negative voltage to the first electrode, and a second connector coupled to the second electrode and that applies a ground voltage to the second electrode, wherein applying the negative voltage to the first electrode and applying the ground voltage to the second electrode comprises negatively biasing the PCM device. The system can further comprise the first connector applying the positive voltage to the first electrode, and the second connector applying a ground voltage to the second electrode, wherein applying the positive voltage to the first electrode and applying the ground voltage to the second electrode comprises positively biasing the PCM device.”

The patent application was filed on March 1, 2019 (16/290,353).

Neuromorphic architecture for unsupervised pattern detection and feature learning
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,650,307) developed by Pantazi, Angeliki, Thalwil, Switzerland, and Wozniak, Stanislaw Andrzej, Adliswil, Switzerland, for a “neuromorphic architecture for unsupervised pattern detection and feature learning.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments relate to a neuromorphic architecture for unsupervised feature learning using memristive synapses realized using phase-change devices. A spiking neural network architecture for unsupervised pattern learning and a spike-based learning algorithm compatible with phase-change synapses is described, and a feature-learning algorithm capable of performing a sequence of set operations on input patterns is provided. A learning rule for the extraction of certain features of the input that is compatible with spiking neurons and synapses with spike-based plasticity is also provided. The system enables enhanced pattern- and feature-extraction capabilities in neuromorphic systems.”

The patent application was filed on September 13, 2016 (15/264,081).

Resistive memory device
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,600,958) developed by Jonnalagadda, Vara S. P., Wallisellen, Switzerland Kersting, Benedikt J., Rueschlikon, Switzerland, Koelmans, Wabe W., Adliswil, Switzerland, Salinga, Martin, Thalwil, Switzerland, and Sebastian, Abu, Adliswil, Switzerland, for a “resistive memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The invention is directed to a resistive memory device comprising a control unit for controlling a memory cell of the memory device. The memory cell includes a first terminal, a second terminal and a phase change segment comprising a phase-change material. The phase change segment is arranged between the first terminal and the second terminal. The phase change material is antimony. The phase change segment retains an amorphous region during a write operation. The control unit, during the write operation, applies an electrical programming pulse to the terminals to cause a portion of the phase change segment to transition from a crystalline phase to an amorphous phase comprising the amorphous region. A trailing edge duration of the electrical programming pulse is adjusted based on ambient temperature to prevent re-crystallization of the amorphous region. Shorter trailing edge durations are used at increasing ambient temperatures.”

The patent application was filed on December 19, 2018 (16/225,318).

Symmetric tunable PCM resistor for artificial intelligence circuits
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,586,922) developed by Cohen, Guy M., and Solomon, Paul M., Westchester, NY, for “symmetric tunable PCM resistor for artificial intelligence circuits.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change material (PCM) device is disclosed. The PCM device includes a bottom electrode and an insulator layer over the bottom electrode. The PCM device further includes a resistive electrode over the insulator layer with a via in the insulator layer between one end of the resistive electrode and the bottom electrode. The PCM device further includes a PCM region over the resistive electrode and a top electrode over the PCM region.”

The patent application was filed on August 21, 2018 (16/106,984).

Phase change memory with dielectric bi-layer
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,573,808) developed by Saraf, Iqbal Rashid, Cobleskill, NY, Brew, Kevin W., Albany, NY, Ok, Injo, Loudonville, NY, Saulnier, Nicole, Slingerlands, NY, and Bruce, Robert, White Plains, NY, for “phase change memory with a dielectric bi-layer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Techniques regarding protecting a dielectric material during additive patterning of one or more phase change memories are provided. For example, one or more embodiments described herein can comprise a method, which can comprise forming a bi-layer adjacent a phase change memory element. The bi-layer can comprise a dielectric material and a capping material that can protect a thickness of the dielectric material during a patterning process.”

The patent application was filed on August 21, 2018 (16/107,323).