R&D: Novel Solution to Improve Saddle-Shape Warpage in 3D NAND Flash
Solution provides instruction for solving warpage in 3D NAND manufacturing.
This is a Press Release edited by StorageNewsletter.com on March 5, 2020 at 2:46 pmIOP Science has published an article written by Dandan Shi, University of the Chinese Academy of Sciences, Beijing, China, Zhiliang Xia, Institute of Microelectronics Chinese Academy of Sciences, Beijing, China, Ming Hu, Guozhu Mei, Yangtze Memory Technologies Co., Ltd, wuhan, China, and Zongliang Huo, nstitute of Microelectronics, Chinese Academy of Sciences – Beijing, Laboratory of Nano-fabrication and Novel Devices Integrated Technology, No.3 BeiTuCheng West Road, ChaoYang District, Beijing 100029, PR China, beijing, China.
Abstract: “It is difficult to adjust asymmetrically saddle-shape wafer warpage resulted from high-stress material in 3D NAND Flash memory. This paper proposes a novel method that the suitable trenches on the backside of wafer is formed to improve saddle-shape warpage asymmetrically. Effects of different trench pitches, CDs and depths are studied by FEM (Finite Element Method) simulation. This solution provides an instruction for solving warpage in 3D NAND flash memory manufacturing.“
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