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Samsung Assigned Thirteen Patents

Adaptive interface storage device with multiple storage protocols including NVME and NVME-oF storage devices, computing system, nonvolatile memory module and method of storage device, storage device storing data in RAID, storage device and operating method of storage, storage devices and methods of manufacturing, storage device and operating method of storage device, accessing storage device including nonvolatile memory device and controller, storage device and data processing, operating storage device to compress or decompress data and storage, storage device, data processing system and method of operation, storage device and method of operating, morphic storage

Adaptive interface storage device with multiple storage protocols
including NVME and NVME over fabrics storage devices

Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,521,378) developed by Fischer, Stephen G., Mountain View, CA, and Olarig, Sompong Paul, Pleasanton, CA, for an “
adaptive interface storage device with multiple storage protocols including NVME and NVME over fabrics storage devices.

The abstract of the patent published by the U.S. Patent and Trademark Office states: An adaptive interface storage device. In some embodiments, the adaptive interface storage device includes: a rear storage interface connector, an adaptable circuit connected to the rear storage interface connector, a first multiplexer, connected to the adaptable circuit, and a front storage interface connector, connected to the first multiplexer. The adaptive interface storage device may be configured to operate in a first state or in a second state. The adaptive interface storage device may be configured: in the first state, to present a device side storage interface according to a first storage protocol at the front storage interface connector, and in the second state, to present a device side storage interface according to a second storage protocol, different from the first storage protocol, at the front storage interface connector.

The patent application was filed on June 27, 2018 (16/020,923).

Computing system, nonvolatile memory module and method of storage device
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,521,153) developed by Lim, Sun-Young, Hwaseong-si, Korea, Oh, Ki-Seok, Seoul, Korea, Seo, Sungyong, Seongnam-si, Korea, Cho, Youngjin, Seoul, Korea, and Choi, Insu, Hwaseong-si, Korea, for “
computing system, nonvolatile memory module and method of storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: A method for operating a storage device includes sending a request for a internal operation time for an internal operation to an external device, receiving an internal operation command corresponding to the request from the external device, and performing the internal operation during the internal operation time based on the internal operation command.

The patent application was filed on April 20, 2017 (15/492,436).

Storage device storing data in RAID manner
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,521,152) developed by Park, Dongjin, Hwaseong-si, Korea, Kim, Kilhwan, Yongin-si, Korea, and Woo, Seonghoon, Hwaseong-si, Korea, for a “
storage device storing data in raid manner.

The abstract of the patent published by the U.S. Patent and Trademark Office states: A storage device includes a plurality of nonvolatile memories and a controller. The plurality of nonvolatile memories are configured to distributively store first and second stripes of a stripe set. The controller includes a first memory and a second memory within the controller. The controller is configured to receive the first and second stripes from a host, distributively store the first and second stripes in the plurality of nonvolatile memories, and to perform a parity operation based on the first and second stripes. The controller is configured to generate intermediate parity based on the first stripe and store the intermediate parity in the first memory. If the parity operation is stopped, the controller is configured to move the intermediate parity stored in the first memory to the second memory.

The patent application was filed on September 21, 2017 (15/711,129).

Storage device and operating method of storage
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,509,575) developed by Woo, Seonghoon, Hwaseong-si, Korea, Kim, Haksun, Suwon-si, Korea, Jeong, Taemin, Seoul, Korea, Han, Kyuwook, Seoul, Korea, and Hwang, Soon Suk, Ansan-si, Korea, for “
storage device and operating method of storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: A storage device includes a nonvolatile memory device, and a controller configured to control the nonvolatile memory device based on metadata. The controller encrypts the metadata and loads the encrypted metadata on a random access memory of an external host device.

The patent application was filed on January 12, 2017 (15/404,229).

Data storage devices and methods of manufacturing
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,504,902) developed by Kim, Hong Hyun, Seoul, Korea, Ko, Seung Pil, Hwaseong-si, Korea, Shin, Hyunchul, Seoul, Korea, and Lee, Kilho, Busan, Korea, for “
data storage devices and methods of manufacturing the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: Disclosed are data storage devices and methods of manufacturing the same. The methods may include providing a substrate including a cell region and a peripheral circuit region, forming a data storage layer on the cell region and the peripheral circuit region of the substrate, selectively forming a mask layer on a portion of the data storage layer that is formed on the peripheral circuit region, forming a top electrode layer on the data storage layer and the mask layer, patterning the top electrode layer to form a plurality of top electrodes on the cell region, and patterning the data storage layer using the plurality of top electrodes as an etch mask to form a plurality of data storage parts on the cell region. While patterning the top electrode layer, the mask layer on the peripheral circuit region may serve as an etch stop layer.

The patent application was filed on April 23, 2018 (15/959,366).

Storage device and operating method of storage device
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,504,566) developed by Hong, Juhyung, Suwon-si, Korea, for “
storage device and operating method of storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: The method of operating a storage device includes receiving a command, an address, and data, and comparing data previously stored at a storage space of the nonvolatile memory corresponding to the address with the received data in response to the command. The method includes writing the received data at a nonvolatile memory when the previously stored data is different from the received data. Writing of the received data is terminated when the previously stored data is equal to the received data.

The patent application was filed on March 31, 2015 (14/674,404).

Accessing storage device including nonvolatile memory device and controller
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,503,638) developed by Hwang, JooYoung, Suwon-si, Korea, for a “
method of accessing storage device including nonvolatile memory device and controller.

The abstract of the patent published by the U.S. Patent and Trademark Office states: Aspects of the inventive concept relates to a method of accessing a storage device including a nonvolatile memory device and a controller. The method includes writing user data, a first logical address and a second logical address associated with the user data in a storage space corresponding to the first logical address of the nonvolatile memory device. The user data is update data that updates previous data written in the nonvolatile memory device. The second logical address is a logical address of a storage space of the nonvolatile memory device in which the previous data is written.

The patent application was filed on March 9, 2017 (15/454,542).

Data storage device and data processing
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,503,406) developed by Kang, Nam Wook, Hwaseong-si, Korea, for “
data storage device and data processing system having the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: A data storage device includes a plurality of scale-out storage devices, and a controller configured to determine a characteristic of data and configured to transmit and receive the data to or from a first scale-out storage device among the plurality of scale-out storage devices based on the determined characteristic. Each of the plurality of scale-out storage devices includes a volatile memory, a nonvolatile memory, and a scale-out controller configured to control the volatile memory and the nonvolatile memory.

The patent application was filed on April 28, 2016 (15/141,397).

Operating storage device to compress or decompress data and data storage
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,496,312) developed by Lee, Ju-Pyung, Incheon, Korea, for “
method of operating a storage device to compress or decompress data and a data storage system including the storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: A method of operating a storage device including at least one nonvolatile storage and a storage controller configured to control the nonvolatile storage. A first type of request, original data and a first request information associated with the original data are received, in the storage controller, from an external host device, a compression operation to compress the original data to generate compressed data is performed in the storage controller, in response to the first type of request, and a write operation to write the compressed data in a data storage area of the nonvolatile storage is performed in the storage controller. The data storage area of the nonvolatile storage may store the first request information associated with the original data. The external host may manage mapping information in the form of a mapping table associated with compression/decompression at the storage device.

The patent application was filed on April 26, 2017 (15/497,258).

Data storage device, data processing system and method of operation
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,496,281) developed by Jeong, Ha Neul, Suwon-si, Korea, and Jung, Ki Jo, Gwacheon-si, Korea, for “
data storage device, data processing system and method of operation.

The abstract of the patent published by the U.S. Patent and Trademark Office states: A data processing system includes a host capable of pipelining execution of a command set including a plurality of commands by storing the commands in a buffer, and a data storage device including a NVMe controller that receives the commands and controls execution of data access operations corresponding to the respective commands, generates a completion response upon successfully executing each one of the commands, and stores the resulting completion responses in a buffer, wherein the NVMe controller extracts at least two of the completion responses stored in the buffer to generate a completion packet and transmits the completion packet to the host during a single transaction.

The patent application was filed on October 2, 2015 (14/873,665).

Data storage device and method of operating
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,490,237) developed by Yoon, Jong Hyun, Hwaseong-si, Korea, Jeong, Sung Won, Suwon-si, Korea, and Cha, Hyun Seok, Osan-si, Korea, for “
data storage device and method of operating the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: A data storage device includes a first memory device having a buffer region including a general region and a host access region, a second memory device, and a controller. The first memory device is directly accessible by the host. The controller controls the first memory device or the second memory device to store data provided from the host. The controller stores the data in the host access region and generates metadata of the data, when the data provided from the host complies with a predetermined condition.

The patent application was filed on June 21, 2018 (16/014,443).

Morphic storage
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,489,076) developed by Ki, Yang Seok, Palo Alto, CA, for a “
morphic storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A solid state drive with a capability to select physical flash memory blocks and erasure and programming methods according to requirements of an application using storage in the solid state drive. A wear-out tracker in the solid state drive counts programming and erase cycles, and a raw bit error rate tracker in the solid state drive monitors raw bit errors in data read from the solid state drive. The application provides, to the solid state drive, requirements on an allowable retention time, corresponding to the anticipated storage time of data stored by the application, and on an average response time corresponding to programming and read times for the flash memory. The solid state drive identifies physical flash memory blocks suitable for meeting the requirements, and allocates storage space to the application from among the identified physical flash memory blocks.

The patent application was filed on August 2, 2018 (16/053,686).

Morphic storage
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (10,489,075) developed by Choi, Inseok Stephen, Redwood City, CA, and Ki, Yang Seok, Palo Alto, CA, for a “
morphic storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A solid state drive with a capability to select physical flash memory blocks and erasure and programming methods according to requirements of an application using storage in the solid state drive. A wear-out tracker in the solid state drive counts programming and erase cycles, and a raw bit error rate tracker in the solid state drive monitors raw bit errors in data read from the solid state drive. The application provides, to the solid state, drive requirements on an allowable retention time, corresponding to the anticipated storage time of data stored by the application, and on an average response time corresponding to programming and read times for the flash memory. The solid state drive identifies physical flash memory blocks suitable for meeting the requirements, and allocates storage space to the application from among the identified physical flash memory blocks.

The patent application was filed on July 25, 2018 (16/045,639).

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