GigaDevice Semiconductor Assigned Patent

GigaDevice Semiconductor, (Shanghai) Inc., Shanghai, China, GigaDevice Semiconductor, (Beijing) Inc., Beijing, China, and GigaDevice Semiconductor, (Hefei) Inc., Hefei, China, has been assigned a patent (10,521,157) developed by Chen, Minyi, San Jose, CA, for “jump page cache read method in NAND flash memory and NAND flash memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A NAND flash memory including a control unit which includes a signal receiving circuit and a flash array, the signal receiving circuit is used to receive a cache read command from an external NAND controller, the flash array includes at least one chip, each chip includes at least one plane, each plane includes a plurality of blocks, each block includes a plurality of pages, when a cache read command is received, it reads pages in a first block according to an address of the page until reaching the last page in the first block, when the last page in the first block is reached, an address of a next to-be-read page is generated according to an address of the last page in the first block to allow the cache read command to read the next to-be-read page.”

The patent application was filed on January 15, 2018 (15/871,142).