Yangtze Memory Technology Assigned Patent
3D memory devices having plurality of NAND string
By Francis Pelletier | June 11, 2019 at 2:32 pmYangtze Memory Technology Co., Ltd., Wuhan, China , has been assigned a patent (10,283,452) developed by Zhu, Jifeng, Lu, Zhenyu, Chen, Jun, Hu, Yushi, Tao, Qian, Yang, Simon Shi-Ning, and Yang, Steve Wiyi, Hubei, China, for “three-dimensional memory devices having a plurality of NAND strings.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments of three-dimensional, (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a NAND memory device includes a substrate, a plurality of NAND strings on the substrate, one or more peripheral devices above the NAND strings, a single crystalline silicon layer above the peripheral devices, and one or more interconnect layers between the peripheral devices and the NAND strings. In some embodiments, the NAND memory device includes a bonding interface at which an array interconnect layer contacts a peripheral interconnect layer.”
The patent application was filed on March 23, 2018 (15/934,730).
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