Samsung 512GB Embedded Universal Flash Storage (eUFS) 3.0

Samsung Electronics Co., Ltd. has begun mass producing at 512GB  embedded Universal Flash Storage (eUFS) 3.0 for next-generation mobile devices.

In line with the latest eUFS 3.0 specification, the company’s memory delivers twice the speed of the previous eUFS storage (eUFS 2.1), allowing mobile memory to support user experiences in future smartphones with large high-resolution screens.

“Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops,” said Cheol Choi, EVP, memory sales and marketing, Samsung Electronics. “As we expand our eUFS 3.0 offerings, including a 1TB version later this year, we expect to play a major role in accelerating momentum within the premium mobile market.“

The company produced an UFS interface with eUFS 2.0 in January, 2015, which was 1.4 times faster than the mobile memory standard at that time, referred to as the embedded multi-media card (eMMC) 5.1. In four years, the firm’s eUFS 3.0 matches the performance of today’s ultra-slim notebooks.

The company’s 512GB eUFS 3.0 stacks eight of the firm’s fifth-generation 512Gb V-NAND die and integrates a performance controller. At 2,100MB/s, the eUFS doubles the sequential read rate of company’s latest eUFS memory (eUFS 2.1) which was announced in January. These solution’s read speed is four times faster than that of a SATA SSDs and twenty times faster than a typical microSD card, allowing smartphones to transfer a full HD movie to a PC in about 3 seconds ^(*).

In addition, the sequential write speed also has been improved by 50% to 410MB/s, which is equivalent to that of a SATA SSD.

The memory’s random read and write speeds provide up to a 36% increase over the current eUFS 2.1 industry specification, at 63,000 and 68,000 IO/s, respectively. With the gains in random read and writes that are more than 630 times faster than general microSD cards (100 IO/s), a number of complex applications can be simultaneously run, while achieving enhanced responsiveness on the newest generation of mobile devices.

Following the 512GB eUFS 3.0 as well as a 128GB version that are both launching this month, the company plans to produce 1TB and 256GB models in 2H19.

^(*) The calculation is based on transferring a 3.7GB full HD movie file from a mobile device with the 512GB eUFS 3.0 to a PC with a non-volatile memory express (NVMe) interface SSD.
^(**) Reference: Comparison of Samsung’s internal memory performance

Read also:
Samsung: 1TB Embedded Universal Flash Storage (eUFS) 2.1 for Smartphones   
Up to 1,000MB/s, 58,000 IO/s, and up to 50,000 IO/s. random RW speeds
February 5, 2019 | Press Release
Samsung in Mass Production of 256GB Embedded Universal Flash Storage    
For automotive applications
February 12, 2018 | Press Release