Samsung: 1TB Embedded Universal Flash Storage (eUFS) 2.1 for Smartphones

Samsung Electronics Co., Ltd. has begun mass producing the industry’s first 1TB embedded Universal Flash Storage (eUFS) 2.1, for use in next-generation mobile applications.

Just four years after introducing the first UFS solution, the 128GB eUFS, the company has passed the terabyte threshold in smartphone storage. Smartphone enthusiasts will soon be able to enjoy storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards.

“The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices,” said Cheol Choi, EVP, memory sales and marketing, Samsung Electronics. “What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.“

Within the same package size (11.5×13.0mm), the 1TB eUFS solution doubles the capacity of the previous 512GB version by combining 16 stacked layers of the firm’s advanced 512Gb V-NAND flash memory and a newly developed proprietary controller. Smartphone users will be able to store 260 ten-minute videos in 4K UHD (3,840×2,160) format, whereas the 64GB eUFS widely used in many current high-end smartphones is capable of storing 13 videos of the same size.

The 1TB eUFS also possesses speed, allowing users to transfer large amounts of multimedia content in reduced time. At up to 1,000MB/s, the eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA SSD. This means that 5GB-sized full HD videos can be offloaded to an NVMe SSD in as fast as fives, which is ten times the speed of a typical microSD card. Furthermore, the random read speed has increased by up to 38% over the 512GB version, clocking in at up to 58,000 IO/s. Random writes are 500 times faster than a high-performance microSD card (100 IO/s), coming in at up to 50,000 IO/s. The random speeds allow for high-speed continuous shooting at 960 frames/second and will enable smartphone users to take advantage of the multi-camera capabilities in today and tomorrow’s models.

The company plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the 1H19 to address the anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world.

Reference: Comparison of internal memory performance
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