Everspin nvNITRO NVMe Storage Accelerator Family at 1GB and 2GB

Everspin Technologies, Inc. announced its nvNITRO line of storage accelerators which delivers fast read and write times with ultra-low latency.

The company is introducing initial capacities of 1GB and t2GB of Spin Torque MRAM, based on its 256Mb DDR3 ST-MRAM.

Capacities from 4GB up to 16GB will be available later in this year utilizing firm’s one gigabit DDR4 ST-MRAM.

The nvNITRO ES1GB and ES2GB operate at 1,500,000 IO/s with 6μs end-to-end latency.

They are offered in a half-height, half-length (HHHL) PCIe card with two access modes: NVMe SSD and memory mapped IO (MMIO).

Enterprise storage system designers have the benefit of memory speed in a storage form factor and protocol.

The use of company’s ST-MRAM means that the data is persistent and power fail safe without the need for super-capacitors or battery backup, saving critical space in storage racks. The high cycle endurance of ST-MRAM enables unlimited uniform drive writes per day, eliminating the need for complex wear leveling algorithms used in NAND flash based drives.

There is no degradation in R/W performance over time with ST-MRAM.

This performance, combined with low and consistent latency, means that demanding applications such as high frequency financial trading systems will be able to count on faster, more predictable transactions. The R/W speed and low latency have value in many storage applications such as database and file system acceleration, on-line transaction processing log caches, and metadata caching/buffering. The need for faster speed across storage networks and within data centers can be met with the industry’s first all MRAM storage cards that provide both block access storage and byte addressable memory functions on the same platform. The PCIe Gen 3, NVMe interface makes it simple to add this capability to existing storage networks and servers because there is no need for special drivers or OS changes.

The nvNITRO product is under test at customers. Initial production is planned for 2Q17.

The company will be expanding the nvNITRO line with M.2 and U.2 form factors with capacity options ranging from 512MB to 8GB throughout the year.