Samsung Acquires Grandis

Samsung Electronics Co., Ltd. announced acquisition of Grandis, Inc. (based in Silicon Valley, California), in spin transfer torque random access memory (STT-RAM).

Grandis will be merged into those Samsung’s R&D operations that are focused on developing the next evolution of memory, where new semiconductor materials and structures are reviewed for their long-term commercial value.

With its expertise in next-generation memory solutions and technical capabilities, Grandis will contribute to Samsung’s continued development of cutting-edge memory semiconductor technologies and become a part of the company’s global R&D network.

Effective late July, the acquisition includes the full scope of technology, assets and human resources under Grandis, Inc.

Further details of the transaction were not disclosed.

Comments

Grandis was established in 2002.

Investors include Applied Ventures, Sevin Rosen Funds, Matrix Partners, Incubic and Concept Ventures.

STT-RAM combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM, and the non-volatility of flash, coupled with essentially unlimited endurance. Its performance exceeds that of other prospective non-volatile memory technologies, and it solves the drawbacks of first-generation, field-switched MRAM. It has write selectivity, scalability beyond the 45nm technology node, low power consumption, and a simpler architecture and manufacturing process than first-generation MRAM.