IBM Assigned Thirteen Patents

Suppression of void-formation of PCM materials
IBM Corp., Armonk, NY, has been assigned a patent (12495722) developed by Cheng; Cheng-Wei, Bruce; Robert L., White Plains, NY, BrightSky; Matthew Joseph, Armonk, NY, and Fraczak; Gloria Wing Yun, Queens, NY, for “suppression of void-formation of PCM materials.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A bottom electrode is deposited on a substrate. A dielectric layer is deposited on the bottom electrode. One or more structures are patterned within the dielectric layer. A liner layer is deposited on top of the dielectric layer and the bottom electrode. A selectivity promotion layer is deposited on top of the liner layer. The selectivity promotion layer is etched to expose a top surface of the dielectric layer and a portion of the bottom electrode. A phase change memory material layer is deposited within a void of the one or more structures between the selectivity promotion layer.”

The patent application was filed on 2021-12-06 (17/457750).

In-situ low temperature dielectric deposition and selective trim of phase change materials
IBM Corp., Armonk, NY, has been assigned a patent (12471293) developed by Buzi; Luxherta, Chappaqua, NY, Miyazoe; Hiroyuki, White Plains, NY, Utomo; Henry K., Ridgefield, CT, and Sagianis; Matthew Peter, Bayside, NY, for an “in-situ low temperature dielectric deposition and selective trim of phase change materials.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of fabricating a resistive semiconductor memory structure that provides in-situ selective etch of phase change materials during deposition of dielectric at low temperature (in the same chamber). The method provides, to a single processing chamber, a semiconductor wafer including a trimmed resistive memory device structure having one or more layers of phase change material used to form a resistive memory device. The one or more layers of phase change material have oxidized sidewall surfaces as a result of a prior etching step where a whole stack structure of the layers forming the resistive memory structure is etched. Then, an encapsulating of the trimmed resistive memory device structure is performed by depositing, within the processing chamber, using a PECVD, a layer of dielectric material, and during the encapsulating, etching, within the processing chamber, the wafer to selectively remove the phase change material oxidation at the sidewall surfaces.”

The patent application was filed on 2021-12-08 (17/544993).

Multi-level programming of phase change memory device
IBM Corp., Armonk, NY, has been assigned a patent (12453294) developed by Cheng; Kangguo, Schenectady, NY, Li; Juntao, Cohoes, NY, Chen; Ching-Tzu, Ossining, NY, and Radens; Carl, LaGrangeville, NY, for a “multi-level programming of phase change memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory includes a phase change structure. There is a heater coupled to a first surface of the phase change structure. A first electrode is coupled to a second surface of the phase change structure. A second electrode coupled to a second surface of the heater. A third electrode is connected to a first lateral end of the phase change structure and a fourth electrode connected to a second lateral end of the phase change structure.”

The patent application was filed on 2021-12-09 (17/547152).

Phase-change memory device with conductive cladding
IBM Corp., Armonk, NY, has been assigned a patent (12453296) developed by Cohen; Guy M., Ossining, NY, Cheng; Kangguo, Schenectady, NY, Li; Juntao, Cohoes, NY, Xie; Ruilong, Niskayuna, NY, and Frougier; Julien, Albany, NY, for a “phase-change memory device with conductive cladding.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive material contacts the sidewall of the top electrode, the sidewall of the phase-change material, and a portion of a top surface and a bottom surface of each of the two layers of the resistive liner material. The device structure includes a heater contacting a bottom electrode and the bottom layer of the resistive liner material. The heater is in a first bilayer dielectric. A second bilayer dielectric is under the top electrode.”

The patent application was filed on 2022-11-01 (18/051561).

Conductive oxide diffusion barrier for laser crystallization
IBM Corp., Armonk, NY, has been assigned a patent (12426518) developed by Li; Ning, White Plains, NY, Carta; Fabio, Sadana; Devendra K., Pleasantville, NY, and Chen; Tze-Chiang, Yorktown Heights, NY, for a “conductive oxide diffusion barrier for laser crystallization.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A cross-point memory semiconductor structure and a method of creating the same are provided. There is a first electrode layer on top of the substrate. A conductive oxide diffusion barrier layer is on top of the first electrode. A polycrystalline silicon diode is on top of the conductive oxide diffusion barrier. A phase change material (PCM) layer is on top of the polycrystalline silicon diode. A second electrode is on top of the PCM layer.”

The patent application was filed on 2019-12-17 (16/718077).

Phase change memory with graded heater
IBM Corp., Armonk, NY, has been assigned a patent (12408571) developed by Philip; Timothy Mathew, Albany, NY, Brew; Kevin W., Niskayuna, NY, and Han; Jin Ping, Yorktown Heights, NY, for a “phase change memory with graded heater.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A heater, a system, and a method for linearly changing the resistance of the phase change memory through a graded heater. The system may include a phase change memory. The phase change memory may include a dielectric. The phase change memory may also include a heater patterned on the dielectric, the heater including: an outside conductive heating layer that has a higher resistance than other layers of the heater, and an inside conductive heating layer that has a lower resistance than the outside conductive heating layer, where the outside conductive heating layer is at an outside area of the heater and the inside conductive heating layer is at an inside area of the heater. The phase change memory may also include a phase change material proximately connected to the heater. The phase change memory may also include a top electrode proximately connected to the phase change material.”

The patent application was filed on 2021-06-25 (17/358293).

Stacked cross-point phase change memory
IBM Corp., Armonk, NY, has been assigned a patent (12402545) developed by Cheng; Kangguo, Schenectady, NY, Radens; Carl, LaGrangeville, NY, Xie; Ruilong, Niskayuna, NY, and Li; Juntao, Cohoes, NY, for a “stacked cross-point phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A stacked phase change memory structure having a cross-point architecture is provided. The stacked phase change memory structure includes at least two phase change material element-containing structures stacked one atop the other. Each phase change material element-containing structure of the plurality of phase change material element-containing structures has a cross-point architecture and includes, from bottom to top, at least one bottom electrode, a phase change material element, and a top electrode.”

The patent application was filed on 2021-12-08 (17/545635).

Composite material phase change memory cell
IBM Corp., Armonk, NY, has been assigned a patent (12402546) developed by Philip; Timothy Mathew, Albany, NY, Brew; Kevin W., Niskayuna, NY, Stuckey; Caitlin Camille, Albany, NY, Martin; Rebecca Colby, Greenfield Center, NY, Robison; Robert, Rexford, NY, and Clevenger; Lawrence A., Saratoga Springs, NY, for a “composite material phase change memory cell.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory (PCM) cell includes a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, and a phase change section positioned between the first electrode and the second electrode. The phase change section includes a first phase change material having a first resistance drift coefficient, and a second phase change material having a second resistance drift coefficient that is greater than the first resistance drift coefficient. An axis of the PCM cell extends between the first electrode and the second electrode, and the second phase change material is offset from the first phase change material in a direction that is perpendicular to the axis.”

The patent application was filed on 2021-12-28 (17/646210).

Multi function single via patterning
IBM Corp., Armonk, NY, has been assigned a patent (12389811) developed by Leobandung; Effendi, Stormville, NY, for a “multi function single via patterning.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Various methods and structures for fabricating a semiconductor structure with vertical vias interconnecting BEOL metallization layers. A first BEOL metallization layer includes a first metallization contact. A second BEOL metallization layer is disposed on the first BEOL metallization layer. The second BEOL metallization layer includes a second metallization contact. A dielectric layer is vertically interposed between the first and second metallization layers. A first vertical via interconnects, through the dielectric layer, the first and second metallization contacts. In the first vertical via, a phase change material non-volatile memory (PCM) is vertically interposed between an upper electrode and a lower electrode. The lower electrode is electrically connected to the first metallization contact. The upper electrode is electrically connected to the second metallization contact.”

The patent application was filed on 2018-11-13 (16/188532).

Phase change material including deuterium
IBM Corp., Armonk, NY, has been assigned a patent (12376503) developed by Cheng; Kangguo, Schenectady, NY, Li; Juntao, Cohoes, NY, Gasasira; Arthur Roy, Halfmoon, NY, Liu; Louis Zuoguang, Schenectady, NY, and Majumdar; Amlan, White Plains, NY, for a “phase change material including deuterium.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The density of deuterium or hydrogen within phase change material (PCM) of a PCM memory cell reduces the active defects in the amorphous phase of the PCM by passivating dangling bonds, which results in the PCM becoming easier to nucleate during the SET process of the PCM memory cell. Resultingly, the addition of deuterium or hydrogen within the PCM relatively increases the SET programming voltage window of the PCM memory cell compared with a similar PCM cell without.”

The patent application was filed on 2023-03-23 (18/188729).

Global heater for phase change memory
IBM Corp., Armonk, NY, has been assigned a patent (12364174) developed by Gong; Nanbo, White Plains, NY, Ando; Takashi, Eastchester, NY, Reznicek; Alexander, Troy, NY, and Hekmatshoartabari; Bahman, White Plains, NY, for a “global heater for phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of the present invention include a phase change memory (PCM) array. The PCM array may include a plurality of PCM cells. Each PCM cell in the plurality of PCM cells may include a top electrode, a resistive element, and a bottom electrode. The PCM array may also include a global heater surrounding the plurality of PCM cells having a thermally conductive material contacting each of the plurality of PCM cells. The global heater may be configured to receive an electric signal to heat the plurality of PCM cells simultaneously.”

The patent application was filed on 2021-12-08 (17/545195).

Phase-change memory cell with mixed-material switchable region
IBM Corp., Armonk, NY, has been assigned a patent (12342736) developed by BrightSky; Matthew Joseph, Armonk, NY, Cheng; Cheng-Wei, White Plains, NY, Cohen; Guy M., Westchester, NY, Bruce; Robert L., White Plains, NY, Ray; Asit, Baldwin, NY, and Kim; Wanki, Chappaqua, NY, for a “phase-change memory cell with mixed-material switchable region.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An electronic device includes a first electrode, a second electrode, and a memory component configured to store a resistive state. The memory component includes a layered region arranged in direct contact with the first electrode and a bulk region arranged in direct contact with the second electrode. The layered region includes a plurality of first layers made of a first material and a plurality of second layers made of a second material alternatingly arranged with one another. The first material is a phase-change material and the second material is a non-phase-change material. The bulk region is a continuous mass made of a third material that is different than the first material and the second material, and the bulk region is in direct contact with at least two of the first layers and at least one of the second layers of the layered region.”

The patent application was filed on 2022-12-08 (18/063189).

Applying inert ion beam etching for improving a profile and repairing sidewall damage for phase change memory devices
IBM Corp., Armonk, NY, has been assigned a patent (12329044) developed by Buzi; Luxherta, Yorktown Heights, NY, Suwannasiri; Thitima, Oak Ridge, NJ, Gignac; Lynne Marie, Beacon, NY, Bruce; Robert L., White Plains, NY, and Engelmann; Sebastian Ulrich, White Plains, NY, for “applying inert ion beam etching for improving a profile and repairing sidewall damage for phase change memory devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A process of improving a profile and repairing sidewall damage for phase change memory devices. The process includes applying inert ion beam etching to trim a sidewall of a layer of phase change memory material in a phase change memory device, where the sidewall has been damaged in reactive ion etching using halogens. In the process, the inert ion beam etching is with low energy. In the process, applying the inert ion beam etching to trim the sidewall is at a predetermined low temperature. In the process, applying the inert ion beam etching to trim the sidewall is at a predetermined small angle between an inert ion beam and a surface tangent of the sidewall.”

The patent application was filed on 2021-11-24 (17/456402).