R&D: Reduction of Current for Magnetization Switching in Nanomagnet with Perpendicular Anisotropy by Spin-splitter Torque
Findings highlight SST’s promise for energy-efficient and reliable switching in future magnetic random-access memory (MRAM) technologies.
This is a Press Release edited by StorageNewsletter.com on December 10, 2025 at 2:00 pmApplied Physics Express has published an article written by Tomoki Watanabe, Graduate School of Informatics and Engineering, University of Electro-Communications, Chofu, 182-8585, Japan, Keisuke Yamada Department of Chemistry and Biomolecular Science, Faculty of Engineering, Gifu University, Gifu, 501-1193, Japan, and Yoshinobu Nakatani, Graduate School of Informatics and Engineering, University of Electro-Communications, Chofu, 182-8585, Japan.
Abstract: “This study investigates spin-splitter torque (SST) for magnetization switching in nanoscale magnets with perpendicular anisotropy, aiming to reduce current requirements in magnetic memory devices. A micromagnetic model shows that optimizing the spin polar angle () can lower the threshold current density by 1.6–27 times compared to the traditional spin–orbit torque method. A above ∼134° ensures high switching probability, while tailoring the current pulse shape cuts switching error rates by about 200 times. The findings highlight SST’s promise for energy-efficient and reliable switching in future magnetic random-access memory (MRAM) technologies.“












