R&D: Achieving 10-year Data Retention in Single Electron Memory, design Pathway using Metal Nanocrystals and High-Dielectrics

Sensors and Actuators A: Physical has published an article written by Amine Touati, Faculty of Sciences of Monastir, University of Monastir, 5019 Monastir, Tunisia, Hamed Dehdashti Jahromi, Department of Electrical Engineering, College of Engineering, Jahrom University, Jahrom, Iran, Nabil Zeiri, Laboratory of Condensed Matter and Nanosciences (LMCN), Department of Physics, Faculty of Sciences of Monastir, University of Monastir, 5019 Monastir, Tunisia, Adel Kalboussi, Microelectronics and Instrumentation Laboratory, Physics Department, Faculty of Sciences of Monastir, University of Monastir, Tunisia.

Abstract: “Single Electron Memory (SEM) technology promises to overcome the scaling and power limitations of conventional data storage, but its viability hinges on achieving non-volatility without sacrificing performance. To address this challenge, we present a systematic design optimization using a multi-faceted simulation framework to quantify the impact of nanocrystal material and dielectric choice on device metrics. Our simulations prove that metal nanocrystals, particularly Titanium (Ti), dramatically outperform silicon in charge retention. The central finding of this work is that integrating a high- tunnel barrier is essential for non-volatile operation. We identify an optimal structure—a 10 nm Ti nanocrystal with a 4 nm HfO barrier—that achieves a projected 10-year retention time while maintaining write speeds comparable to DRAM. By providing this actionable design pathway, our research moves SEM from a theoretical concept toward a practical, high-performance memory solution.“