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R&D Articles in APL Materials Special Collection on Energy-Efficient Memory Materials

Twelve articles in open access

AIP Publishing, in APL Materials special collection, had published online a lot of articles in free access on ‘Energy-Efficient Memory Materials’.

Abstract:In the current era of Big Data, with over 150 zettabytes of data being created and replicated globally, the energy consumption of information and communication technologies (ICT) is rising exponentially. A significant portion of this energy is wasted as heat due to the Joule effect (i.e., from electric currents required to operate memory devices). Additionally, traditional computers have separate memory and data processing units that must continuously communicate, leading to substantial time and energy expenditure.“

Given the limitations of current computing devices, advancing ICT has become increasingly challenging. A paradigm shift in computing is essential. Presently, several strategies aim to develop memory devices that emulate the human brain, where data storage and processing occur in the same unit (in-memory neuromorphic computing). Various materials are being explored for this purpose, including memristive, spintronic, ferroelectric, multiferroic, magneto-ionic, 2D or phase-change materials. In addition to new materials, advanced computing concepts are also being developed, such as deep, spiking, recurrent, or Hopfield neural networks. Other approaches include reservoir, photonic, thermodynamic,or analog computing, amongst others.

This Special Topic brings together scholars from diverse scientific disciplines – physics, chemistry, materials science, engineering – to explore all aspects related to advanced materials for energy-efficient memories, from fundamentals to applications.

Guest Edited by Karin Everschor-Sitte (Universität Duisburg-Essen, Germany) and Daniele Ielmini (Politecnico di Milano, Italy), with Jordi Sort (Universitat Autònoma de Barcelona, Spain and Associate Editor, APL Materials) and Monica Lira-Cantu (Catalan Institute of Nanoscience and Nanotechnology, Spain and Editor-in-Chief, APL Energy).

Perspectives:

Energy-efficient memory materials Free
Written by Jordi Sort; Karin Everschor-Sitte; Daniele Ielmini; and Monica Lira-Cantu

Articles:

Perspectives on molecular spin-based memories Open Access
Written by Subir Roy; and Alberto Riminucci

Perovskite oxide based transparent neuromorphic photoelectric memristor for artificial ocular system Open Access
Written by Saransh Shrivastava; Stephen Ekaputra Limantoro; Hans Juliano; and Tseung-Yuen Tseng

Interfacial tuning of magnetic anisotropy for low-power spintronic memory devices Open Access
Written by Astha Khandelwal; Suchit Kumar Jena; Lei Wan; Alan Kalitsov; Rajesh Vilas Chopdekar; Derek A. Stewart; Tiffany S. Santos; and  Bhagwati Prasad

Electro–optic coupling modulation on persistent photoconductivity and memristive states in thin-film devices with MoOx/ZnO heterostructured electrodes Open Access
Written by Fushun Li; Xuanhe Li; Jiale Su; Zhenxin Yang; Haikun Zhu; Jinquan Huang; Deng-Ke Wang; Zheng-Hong Lu; and Qiang Zhu

Metal interdiffusion enhanced WOx/CuOx heterojunction optoelectronic memristive synapses for face recognition application Open Access
Written by Hans Juliano; Stephen Ekaputra Limantoro; Firman M. Simanjuntak; and Tseung-Yuen Tseng

Impact of film composition on crystal structure and ferroelectricity in (Al1−xyGaxScy)N ternary wurtzite thin films Open Access
Written by Reika Ota; Nana Sun; Kazuki Okamoto; Shinnosuke Yasuoka; Yoshihiro Ueoka; Daiki Shono; Masami Mesuda; and Hiroshi Funakubo

An ultra-low-loss compact phase-change material-based hybrid-mode interferometer for photonic memories Open Access
Written by Ranjeet Dwivedi; Fabio Pavanello; and Regis Orobtchouk

Magnetic phase diagram of Mn3+xSn1−x epitaxial thin films: Extending the anomalous Hall effect to low temperatures via intrinsic alloying Open Access
Written by K. Gas; J.-Y. Yoon; Y. Sato; H. Kubota; P. Dłużewski; S. Kret; J. Z. Domagala; Y. K. Edathumkandy; Y. Takeuchi; S. Kanai; H. Ohno; M. Sawicki; and S. Fukami

From prediction to experimental realization of ferroelectric wurtzite Al1−xGdxN alloys Open Access
Written by Cheng-Wei Lee; Rebecca W. Smaha; Geoff L. Brennecka; Nancy M. Haegel; Prashun Gorai; and Keisuke Yazawa

Energy efficiency analysis of spin–orbit torque MRAM using composition dependent resistivity and spin Hall angle in Pt/W multilayer structure Open Access
Written by Ji-won Yoon; Hyun-jun Lee; Ji-Hyeon Yun; Si-yeol Lee; Sang Ho Lim; and Seung-heon Chris Baek

Hall deflection of spin-current driven skyrmion and its modulation  Open Access
Written by Yu Wang, and Jingguo Hu

 

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