R&D: Spintronics and Magnetic Memory Devices

Advances in Physics: X  has published an article written by Gyung-Min Choi, Department of Energy Science, Sungkyunkwan University, Suwon, Korea, OukJae Lee, Center for Spintronics, Korea Institute of Science and Technology, Seoul, Korea, Sunjae Chung, Department of Physics Education, Korea National University of Education, Cheongju, Korea, Woojin Kim, Compute & Memory Department, IMEC, Leuven, Belgium, Taeyoung Lee, Foundry Business, Samsung Electronics Co., Giheung, Korea, Byong-Guk Park, Department of Materials Science and Engineering, KAIST, Daejeon, Korea, and Seungmo Yang, Quantum Technology Institute, Korea Research Institute of Standards and Science, Daejeon, Korea.

Abstract: “Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM). Owing to its superior properties of size, speed, and endurance, MRAM is promising for applications in internet-of-things, automotive microcontrollers, and data centers. Here, we review key spintronic technologies of magnetoresistance and spin-transfer torque, which are the operating mechanism for MRAM, and properties and status of MRAM commercialization. We also review recent achievements and future challenges in emerging topics of spin-orbit torque, voltage gating, orbitronics, and antiferromagnetic spintronics, and new applications of spin-torque oscillators, probabilistic computing, and skyrmion-based applications.“