Smart Memories Technologies Assigned Patent

Wuxi Smart Memories Technologies Co., Ltd., Wuxi, China, has been assigned a patent (12387775) developed by Pan; Feng, Freemont, CA, for “ferroelectric memory writing method and associated devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A FRAM memory device can include a plurality of FRAM memory cells, each FRAM memory cell including one transistor and one capacitor electrically coupled to the at least one transistor. The capacitor can be configured to store a bit of data. The memory device can also include a local bit-line configured to carry data to be written to the plurality of memory cells. The memory device can further include a global bit-line configured to communicate with the local bit-line to carry the data to be written to the plurality of memory cells. The memory device can additionally include a local sense amplifier configured to amplify a signal from the global bit-line and to transfer the amplified signal to the local bit-line based on a reference signal. The local sense amplifier can be configured to generate the amplified signal based on comparison to the reference signal.”

The patent application was filed on 2023-07-07 (18/219426).