CEA Assigned Patent
Manufacturing resistive memory cells
By Francis Pelletier | September 9, 2025 at 2:00 pmCommissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, has been assigned a patent (12382845) developed by Guillaume; Nicolas, Blonkowski; Serge, Charpin-Nicolle; Christelle, and Jalaguier; Eric, Grenoble, France, for a “method for manufacturing resistive memory cells.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “This method comprises the following steps: a) providing a stack successively comprising: a substrate; a first electrode; a first dielectric layer, having a first electrical strength; a second metal electrode; a second dielectric layer, having a second dielectric strength that is strictly less than the first dielectric strength; a third electrode; the first dielectric layer and the second electrode having a first interface, the second dielectric layer and the second electrode having a second interface; b) etching the stack by bombardment with electrically charged species, so as to define resistive memory cells; the bombardment of step b) being adapted so that electrically charged species accumulate at the first and second interfaces of each resistive memory cell, so as to generate an electric field that is strictly less than the first electrical strength and is strictly greater than the second dielectric strength.”
The patent application was filed on 2022-08-18 (17/820708).











