TetraMem Assigned Patent

TetraMem Inc., San Jose, CA, has been assigned a patent (12382847) developed by Zhang; Minxian, and Ge; Ning, Newark, CA, for “resistive random-access memory devices with multi-component electrodes and discontinuous interface layers.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure relates to resistive random-access memory (RRAM) devices. An RRAM device may include a first electrode, a first interface layer fabricated on the first electrode; a switching oxide layer fabricated on the first interface layer; and a second electrode fabricated on the switching oxide layer. The switching oxide layer includes a transition metal oxide. The first interface layer includes a discontinuous film of a first material that is more chemically stable than the transition metal oxide. The RRAM device may further include a second interface layer positioned between the switching oxide layer and the second electrode. The second interface layer includes a discontinuous film of a second material that is more chemically stable than the transition metal oxide. The second electrode may include multiple electrode components that may include an alloy, a first layer of a first metallic material, and/or a second layer of a second metallic material.”

The patent application was filed on 2021-11-15 (17/454914).